Influence of post‑deposition annealing on the chemical states of crystalline tantalum pentoxide films

We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta2O5 films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately hexag...

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Bibliografiska uppgifter
Huvudupphovsman: Perez, Israel
Övriga upphovsmän: Sosa, Victor, Gamboa, Fidel, Elizalde Galindo, Jose Trinidad, Mani Gonzalez, Pierre Giovanni, Farias, Rurik, Enriquez Carrejo, Jose Luis
Materialtyp: Artículo
Språk:en_US
Publicerad: 2018
Ämnen:
XPS
Länkar:https://doi.org/10.1007/s00339-018-2198-9
https://doi.org/10.1007/s00339-018-2198-9
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