Study of indium tin oxide–MoS2 interface by atom probe tomography
The molybdenum disulfide (MoS2) and indium tin oxide (ITO) interface were studied by atom probe tomography (APT). Raman spectroscopy, scanning electron microscopy, and grazingincidence x-ray diffraction measurements were performed as complementary characterization. Results confirm that nanowires pla...
Saved in:
Main Author: | Ramos Murillo, Manuel Antonio |
---|---|
Other Authors: | Nogan, Jhon, Boll, Torben, Kauffmman-Weis, Sandra, Rodriguez Gonzalez, Claudia, Enriquez Carrejo, Jose Luis, Helmaier, Martin |
Format: | Artículo |
Language: | spa |
Published: |
2019
|
Subjects: | |
Online Access: | https://doi.org/10.1557/mrc.2019.150 https://www.cambridge.org/core/journals/mrs-communications/article/study-of-indium-tin-oxidemos2-interface-by-atom-probe-tomography/C513A268D236C9B9204BA128250865D9 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type-I Heterojunction by DFT and the Landauer Approach
Published: (2023) -
Electronic states and metallic character of carbide Co/MoS2 catalytic interface
Published: (2021) -
MoS2 Thin Films for Photo-Voltaic Applications
by: Ramos Murillo, Manuel Antonio
Published: (2019) -
On the Electronic Structure of 2H-MoS2: Correlating DFT Calculations and In-Situ Mechanical Bending on TEM
by: Ramos Murillo, Manuel Antonio
Published: (2022) -
Semimetal transition in curved MoS2/ MoSe2 Van der Waals heterojunction by dispersion‑corrected density functional theory
by: Ramos Murillo, Manuel Antonio
Published: (2022)