Influence of post‑deposition annealing on the chemical states of crystalline tantalum pentoxide films
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta2O5 films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately hexag...
Shranjeno v:
| Glavni avtor: | |
|---|---|
| Drugi avtorji: | , , , , , |
| Format: | Artículo |
| Jezik: | en_US |
| Izdano: |
2018
|
| Teme: | |
| Online dostop: | https://doi.org/10.1007/s00339-018-2198-9 https://doi.org/10.1007/s00339-018-2198-9 |
| Oznake: |
Označite
Brez oznak, prvi označite!
|
