Influence of post‑deposition annealing on the chemical states of crystalline tantalum pentoxide films
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta2O5 films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately hexag...
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| Otros Autores: | , , , , , |
| Formato: | Artículo |
| Lenguaje: | en_US |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://doi.org/10.1007/s00339-018-2198-9 https://doi.org/10.1007/s00339-018-2198-9 |
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