Influence of post‑deposition annealing on the chemical states of crystalline tantalum pentoxide films
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta2O5 films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately hexag...
Gespeichert in:
1. Verfasser: | Perez, Israel |
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Weitere Verfasser: | Sosa, Victor, Gamboa, Fidel, Elizalde Galindo, Jose Trinidad, Mani Gonzalez, Pierre Giovanni, Farias, Rurik, Enriquez Carrejo, Jose Luis |
Format: | Artículo |
Sprache: | en_US |
Veröffentlicht: |
2018
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Schlagworte: | |
Online Zugang: | https://doi.org/10.1007/s00339-018-2198-9 https://doi.org/10.1007/s00339-018-2198-9 |
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