Influence of post‑deposition annealing on the chemical states of crystalline tantalum pentoxide films

We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta2O5 films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately hex...

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Bibliographic Details
Main Author: Perez, Israel
Other Authors: Sosa, Víctor, Gamboa, Fidel, Elizalde Galindo, Jose Trinidad, Enriquez-Carrejo, Jose Luis, Mani, Pierre, Farias, Rurik
Format: Artículo
Published: 2018
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