Airy pattern on narrow photoluminescence spectrum of band to band recombination in CdTe: Te thin films

Semiconductor CdTe:Te films were deposited by means of rf sputtering on glass substrates. The excess of Te gave place to a high number of Cd-vacancies (VCd) producing p-type CdTe films. The density of carriers produced a high strength surface electric field which allowed obtain the bandgap value emp...

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Bibliographic Details
Main Author: Becerril-Silva, M.
Other Authors: Meléndez-Lira, M., O., Zelaya-Angelb, Farias, Rurik
Format: Artículo
Published: Elsevier 2018
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