Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type-I Heterojunction by DFT and the Landauer Approach

The electronic structure and thermoelectric properties of MoX2 (X = S, Se) Van der Waals heterojunctions are reported, with the intention of motivating the design of electronic devices using such materials. Calculations indicate the proposed heterojunctions are thermodynamically stable and present a...

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Bibliografiset tiedot
Muut tekijät: López-Galán, Óscar, Perez, Israel, Ramos Murillo, Manuel Antonio, Nogan, John
Aineistotyyppi: Artículo
Kieli:en_US
Julkaistu: 2023
Aiheet:
Linkit:https://doi.org/10.1002/admi.202202339
https://onlinelibrary.wiley.com/doi/10.1002/admi.202202339
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