Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type-I Heterojunction by DFT and the Landauer Approach
The electronic structure and thermoelectric properties of MoX2 (X = S, Se) Van der Waals heterojunctions are reported, with the intention of motivating the design of electronic devices using such materials. Calculations indicate the proposed heterojunctions are thermodynamically stable and present a...
Tallennettuna:
Muut tekijät: | López-Galán, Óscar, Perez, Israel, Ramos Murillo, Manuel Antonio, Nogan, John |
---|---|
Aineistotyyppi: | Artículo |
Kieli: | en_US |
Julkaistu: |
2023
|
Aiheet: | |
Linkit: | https://doi.org/10.1002/admi.202202339 https://onlinelibrary.wiley.com/doi/10.1002/admi.202202339 |
Tagit: |
Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!
|
Samankaltaisia teoksia
-
On the Electronic Structure of 2H-MoS2: Correlating DFT Calculations and In-Situ Mechanical Bending on TEM
Tekijä: Ramos Murillo, Manuel Antonio
Julkaistu: (2022) -
Electronic states and metallic character of carbide Co/MoS2 catalytic interface
Julkaistu: (2021) -
Semimetal transition in curved MoS2/ MoSe2 Van der Waals heterojunction by dispersion‑corrected density functional theory
Tekijä: Ramos Murillo, Manuel Antonio
Julkaistu: (2022) -
Study of indium tin oxide–MoS2 interface by atom probe tomography
Tekijä: Ramos Murillo, Manuel Antonio
Julkaistu: (2019) -
MoS2 Thin Films for Photo-Voltaic Applications
Tekijä: Ramos Murillo, Manuel Antonio
Julkaistu: (2019)