The electronic states of ITO–MoS2: Experiment and theory

We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ITO and MoS2 conform an n-type Schottky barrier of c.a. − 1.0 eV due to orbital...

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Övriga upphovsmän: López Galan, Óscar, Ramos Murillo, Manuel Antonio, Nogan, John, Ávila-García, Alejandro, Boll, Torben, Heilmaier, Martin
Materialtyp: Artículo
Språk:en_US
Publicerad: 2021
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Länkar:https://doi.org/10.1557/s43579-021-00126-9
https://link.springer.com/article/10.1557/s43579-021-00126-9#citeas
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