The electronic states of ITO–MoS2: Experiment and theory
We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ITO and MoS2 conform an n-type Schottky barrier of c.a. − 1.0 eV due to orbital...
Saved in:
Other Authors: | López Galan, Óscar, Ramos Murillo, Manuel Antonio, Nogan, John, Ávila-García, Alejandro, Boll, Torben, Heilmaier, Martin |
---|---|
Format: | Artículo |
Language: | en_US |
Published: |
2021
|
Subjects: | |
Online Access: | https://doi.org/10.1557/s43579-021-00126-9 https://link.springer.com/article/10.1557/s43579-021-00126-9#citeas |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Electronic states and metallic character of carbide Co/MoS2 catalytic interface
Published: (2021) -
Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type-I Heterojunction by DFT and the Landauer Approach
Published: (2023) -
MoS2 Thin Films for Photo-Voltaic Applications
by: Ramos Murillo, Manuel Antonio
Published: (2019) -
In Situ Thermal-Stage Fitted-STEM Characterization of Spherical-Shaped Co/MoS2 Nanoparticles for Conversion of Heavy Crude Oils
by: Ramos Murillo, Manuel Antonio
Published: (2020) -
On the Electronic Structure of 2H-MoS2: Correlating DFT Calculations and In-Situ Mechanical Bending on TEM
by: Ramos Murillo, Manuel Antonio
Published: (2022)