Effect of ion bombardment on the chemical properties of crystalline tantalum pentoxide films
The effect of argon ion bombardment on the chemical properties of crystalline Ta2O5 films grown on Si(100) substrates by radio frequency magnetron sputtering was investigated by X-ray photoelectron spectroscopy. All samples were irradiated for several time intervals [(0.5, 3, 6, 9) min] and the Ta...
Gorde:
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| Beste egile batzuk: | , , , , |
| Formatua: | Artículo |
| Hizkuntza: | English |
| Argitaratua: |
2019
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| Gaiak: | |
| Sarrera elektronikoa: | https://doi.org/10.1016/j.vacuum.2019.04.037 https://doi.org/10.1016/j.vacuum.2019.04.037 |
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