Effect of ion bombardment on the chemical properties of crystalline tantalum pentoxide films

The effect of argon ion bombardment on the chemical properties of crystalline Ta2O5 films grown on Si(100) substrates by radio frequency magnetron sputtering was investigated by X-ray photoelectron spectroscopy. All samples were irradiated for several time intervals [(0.5, 3, 6, 9) min] and the Ta...

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Detalles Bibliográficos
Autor Principal: Perez, Israel
Outros autores: Sosa, Victor, Gamboa, Fidel, Elizalde Galindo, Jose Trinidad, Mani Gonzalez, Pierre Giovanni, Enriquez Carrejo, Jose Luis
Formato: Artículo
Idioma:English
Publicado: 2019
Subjects:
XPS
Acceso en liña:https://doi.org/10.1016/j.vacuum.2019.04.037
https://doi.org/10.1016/j.vacuum.2019.04.037
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