Airy pattern on narrow photoluminescence spectrum of band to band recombination in CdTe:Te thin films
Semiconductor CdTe:Te films were deposited by means of rf sputtering on glass substrates. The excess of Te gave place to a high number of Cd-vacancies (VCd) producing p-type CdTe films. The density of carriers produced a high strength surface electric field which allowed obtain the bandgap value emp...
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| Rannpháirtithe: | , , |
| Formáid: | Artículo |
| Teanga: | en_US |
| Foilsithe / Cruthaithe: |
2018
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| Ábhair: | |
| Rochtain ar líne: | https://doi.org/10.1016/j.jlumin.2017.09.011 https://www.sciencedirect.com/science/article/pii/S0022231317309316 |
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