New Formulation to Synthetize Semiconductor Bi2S3 Thin Films Using Chemical Bath Deposition for Optoelectronic Applications

Abstract: Anisotropic materials possess direction dependent properties as a result of symmetry within their structure. Bismuth sulfide (Bi2S3) is an important semiconductor exhibiting anisotropy due to its crystalline and stratified structure. In this manuscript we present a new and straightforwar...

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Bibliographic Details
Main Author: Carrillo, Amanda
Other Authors: Rivas, Brayan, Mireles, Marcela, Castillo, Santos, Luque, Priscy
Format: Artículo
Language:en_US
Published: 2022
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Online Access:https://doi.org/10.3390/sym14122487
https://www.mdpi.com/2073-8994/14/12/2487
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